Si overgrowth on Y2O3 (1 1 0)/Si (0 0 1) by molecular beam epitaxy

The overgrowth of silicon on Y2O3 (1 1 0)/Si (0 0 1) structures by means of molecular beam epitaxy is investigated. It is shown that Si overlayers grow epitaxially in the (1 1 0) orientation, following the orientation of Y2O3. Layers with 10 nm thickness exhibit Volmer–Weber growth with large 3-dimensional (3D) islands and structural defects. When the thickness is increased, the films become continuous but show increased surface roughness.