Enhancement of the ferroelectric properties of Pb(Zr0.53Ti0.47)O3 thin films fabricated by laser ablation

Thin films of phase-pure perovskite Pb(Zr0.53Ti0.47)O3 (PZT) were fabricated in situ onto Pt/Ti/SiO2/Si substrates by pulsed laser deposition (PLD) using a Nd:YAG laser. We have systematically investigated the effect of various parameters, such as substrate temperatures (450–650 °C) and energy densities (1.5–4 J/cm2) and annealing time (5–30 min), on the property of PZT thin film. X-ray diffraction (XRD), scanning electron microscope (SEM), C–V measurement and hysteresis were used to investigate the electrical, micro structural properties of the thin films. At the optimized deposition condition, remnant polarization, coercive electric field and dielectric constant of the film were 31.5 μC/cm2, 50.5 kV/cm and 930, respectively.