Electrical and optical properties of zinc oxide thin films grown by reactive magnetron sputtering method

ZnO is very interesting material for practical applications because of its high transparency in the visible light and simultaneously high electrical conductivity. In this paper, the ZnO films growth by a reactive magnetron deposition method is used to study the relationship between film parameters and preparation conditions. The influence of discharge power as well as total pressure and oxygen partial pressure on the deposition rate and electrical properties was studied. The p–n junctions were formed by ion-beam deposition of ZnO films on p-type silicon substrates.