Temperature evolution of photoluminescence from an In0.22Ga0.78Sb/GaSb single quantum well

This article investigates photoluminescence (PL) spectra of an In0.22Ga0.78Sb/GaSb single quantum well (SQW) in 10–160 K temperature range. Emissions associated with free exciton and free carrier recombinations were observed. Line-shape analysis of PL spectra was performed by means of a statistical model which includes contributions of free exciton and free carrier recombinations. This model reproduces experimental PL data well and satisfactorily enables quantitative assessment of the relative contributions of the two types of transitions over the whole temperature range. The intensity ratio of the two transitions was interpreted on the basis of the law of mass action.