Title of article
1.3 μm InAs quantum dot resonant cavity light emitting diodes
Author/Authors
Su، نويسنده , , Y.K and Yu، نويسنده , , H.C. and Chang، نويسنده , , S.J. and Lee، نويسنده , , C.T and Wang، نويسنده , , J.S and Kovsh، نويسنده , , A.R. and Wu، نويسنده , , Y.T. and Lin، نويسنده , , K.F and Huang، نويسنده , , C.Y، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
4
From page
256
To page
259
Abstract
Resonant cavity light emitting diodes (RCLEDs) containing nine sheets of self-organized InAs quantum dot (QD) active layers and operating at around 1.3 μm are demonstrated. The structure was grown directly on GaAs substrates, which includes selectively oxidized AlOx current apertures and intracavity metal contacts. It was found that the average operating resistance is 60 Ω, while the average turn-on voltages is 1.6 V. It was also found that temperature coefficient of these RCLEDs was about 0.11 nm/°C.
Keywords
QD , RCLED , Oxide confinement , InAs
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2004
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2141613
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