Characterization of neon implantation damage in silicon

The damage accumulation in neon-implanted silicon, with doses ranging from 1 × 1016 to 5 × 1016 Ne cm−2, was explored. To avoid amorphization, samples were implanted at 250 °C. As implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channeling conditions (RBS/C) and by transmission electron microscopy (TEM) to quantify and characterize the lattice damage. Anneals were performed at 800 °C during 30 min. In the as-implanted samples, a high density of small bubbles is observed all along the ion distribution, forming a uniform and continuous layer. Clusters of interstitial defects are also present in the deeper part of the layer corresponding to the end of range of ions. After annealing, cavities are formed together with extended defects characterized as {3 1 1} defects. The results are discussed in comparison to the case of helium implantation and in the highlight of the bubble formation mechanisms.