Title of article :
Transport via excitonic complexes in resonant tunneling structures
Author/Authors :
S.S. and Vercik، نويسنده , , A. and Galvمo Gobato، نويسنده , , Y. and Brasil، نويسنده , , M.J.S.P. Brasil، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
3
From page :
128
To page :
130
Abstract :
In this work we study the formation of neutral and negatively charged excitons in double barrier diodes under bias, and how they contribute to transport. We observe a pre-resonance shoulder in the current–voltage curve, which is associated to trion-assisted tunneling of electrons. We analyze this phenomenon by measuring also the quantum-well photoluminescence emission. This trion-assisted mechanism is terminated when trion complexes are dissociated either by thermal excitation or by scattering with free carriers in the quantum well. A simple phenomenological rate equation model allows us confirming the hypothesis of charge transport via a trion state and the proposed methods of termination.
Keywords :
Heterostructures , Quantum well , Optical properties , Tunneling
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2004
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2141813
Link To Document :
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