Author/Authors :
Lai، نويسنده , , Fang-I and Chang، نويسنده , , Ya-Hsien and Hsueh، نويسنده , , T.H. and Huang، نويسنده , , H.W. and Laih، نويسنده , , L.H. and Kuo، نويسنده , , H.C. and Wang، نويسنده , , S.C. and Guung، نويسنده , , Tai-Cheng، نويسنده ,
Abstract :
We demonstrated the enhancement in the performance of proton-implanted GaAs VCSEL by incorporation of a new p-contact scheme using a Ti and ITO transparent overcoating on the regular p-contact. The kink characteristics in light output power versus current (L–I) curve of the VCSEL with the Ti/ITO overcoating were improved with a reduction in the derivative kink factor of as large as 70%. The high-speed response of the overcoated device also shows a more open clear eye and lower jitter of 35 ps operating at 2.125 Gb/s under 10 mA bias and 9 dB extinction ratio compared to the no overcoated device. Better current spreading and uniformity induced by the overcoating could be responsible for these performance improvements.
Keywords :
kink , high-speed operation , VCSEL , Proton implant , Indium-tin-oxide
