Cryo-transfer TEM study of vacancy cluster formation in thin films of aluminum and copper elongated at low temperature

Kiritani et al. encountered a large number of vacancy clusters in heavily deformed thin metal films at room temperature. In the present work, thin films of aluminum and copper were loaded to fracture in liquid nitrogen and transferred directly to the TEM without warming up (Cryo-transfer TEM). In thin films of Al and Cu deformed at 78 K, many defect clusters were observed at 120 K. In thin Al films, small defect clusters disappeared by the 120 keV electron irradiation. Upon isochronal annealing, some of the dislocation loops grew in their size, which is much larger than those observed at 120 K. However, in regions that were not exposed to electron irradiation at 120 K, only a large number of stacking fault tetrahedra were observed after room temperature annealing. In copper, the 200 keV electron beam did not significantly change the defect clusters observed at 120 K.