The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles

Boron cluster formation and dissolution in high concentration B profiles and the role of Si interstitials in these processes are analyzed by kinetic non-lattice Monte Carlo atomistic simulations. For this purpose, we use theoretical structures as simplifications of boron implants into preamorphized Si, followed by low-temperature solid phase epitaxial (SPE) regrowth or laser thermal annealing process. We observe that in the presence of high B concentrations (above 1020 cm−3), significant deactivation occurs during high temperature anneal, even in the presence of only equilibrium Si interstitials. The presence of additional Si interstitials from an end of range (EOR) damage region accelerates the deactivation process and makes B deactivation slightly higher. We show that B deactivation and reactivation processes can be clearly correlated to the evolution of Si interstitial defects at the EOR. The minimum level of activation occurs when the Si interstitial defects at EOR dissolve or form very stable defects.