Electrical characterization of TiSi/Si1−x−yGexCy Schottky diodes

TiSi/Si1−x−yGexCy Schottky diodes have been fabricated on both Si1−x−yGexCy layers with and without a Si-cap layer and Rutherford backscattering spectroscopy (RBS) was used to verify the thickness and composition of the silicide phases. The forward- and reverse-current voltage (I–V) characteristics for the diodes were measured in the temperature range of 100–300 K to determine the Schottky barrier height (ϕb) and ideality factor (n). It has been found that the ideality factor decreases with an increase in temperature while the barrier height increases. The effect of the Si-cap layer on electrical characteristics of the Si1−x−yGexCy Schottky diodes is also studied. Results are compared with a similar TiSi/Si Schottky diode processed in the same run.