Author/Authors :
Colombi، نويسنده , , P. and Bontempi، نويسنده , , E. and Meotto، نويسنده , , U.M. and Porro، نويسنده , , S. and Ricciardi، نويسنده , , C. and Scaltrito، نويسنده , , L. and Ferrero، نويسنده , , S. and Richieri، نويسنده , , G. and Merlin، نويسنده , , L. and Depero، نويسنده , , L.E.، نويسنده ,
Abstract :
Thin films of nickel were grown on highly n-doped 4H-SiC bulk wafers by thermal evaporation in vacuum. Thermal treatments between 673 and 1323 K have been performed in order to study the structure and microstructure of the films. By XRD2 analysis, it was found that the Ni2Si phase, responsible of the ohmic behaviour of the contact, is oriented and large crystallite grows when the temperature of the treatment exceeds 1123 K. Moreover, by sample rotation, the preferred orientation was overcome and the Ni2Si quantity was evaluated. The structure and microstructure results were correlated to the evolution of Schottky barrier height obtained by electrical measurements.
