A new generalized model of the effective mobility in MOS transistors operated from helium to room temperature

A new model of effective mobility in MOS transistors is proposed, it explain the negative transconductance in ohmic regime at high field, evaluated the surface roughness thickness, the series resistances and also the role of coulomb collisions at low temperature. The application of the model on short channel thin oxide film transistor operated from Helium to room temperature show the best fit compared with other methods. The role of the high k dielectric gate oxide on the mobility is also studied.