Interaction between point defects, extended defects and impurities in the Si–SiO2 system during the process of its formation

The results of an investigation of the point defect generation, redistribution and interaction with extended defects and impurities in the Si–SiO2 system during the process of its formation by means of electron paramagnetic resonance (EPR), MOS structure voltage–capacitance technique, metallography, transmission electron microscopy and surface photovoltage spectra are presented. The influence of the oxidation conditions (oxidation time, cooling rate and ambient) on the defect structure of the Si–SiO2 interface and its electrical parameters has been studied. It has been established that the dependence of vacancy type defects EPR signal intensity I on the oxide thickness d is non-monotonous. In the samples with the oxide thickness in the range of the I(d) maximum, an interaction between point defects and extended defects occurs. It has been shown that the interaction between point defects and extended defects in the Si–SiO2 system depends on oxidation ambient and affects the structural and electrical properties of the interface.