DLTS and PL study of defects in InAlAs/InP heterojunctions grown by metal organic chemical vapor deposition

Deep level transient spectroscopy (DLTS) and photoluminescence (PL) techniques are used to study the defects present in InAlAs/InP layers grown by metal organic chemical vapor deposition (MOCVD). In DLTS technique, different reverse bias and different heights and widths of the filling pulse are applied to the samples; the measurements have revealed the presence of four defects labelled A–D, which are found to be in a good agreement with the results of the photoluminescence (PL) technique. In fact, a detailed study of the defect (D) by photoluminescence (PL) technique has led to the same results as those determined by DLTS.