Metal-organic chemical vapor deposition of indium selenide films using a single-source precursor

Indium selenide thin films have been deposited on glass, Si(1 0 0) and polycrystalline GaAs substrates from In[(SePiPr2)2N]2Cl precursor by aerosol-assisted (AA) and low-pressure (LP) metal-organic chemical vapor deposition (MOCVD). X-ray powder diffraction (XRPD) patterns of these films indicated the growth of hexagonal γ-In2Se3. The morphologies of films have been studied by scanning electron microscopy (SEM) and compositions have been determined by energy dispersive analysis of X-rays (EDAX) and X-ray photoelectron spectroscopy (XPS).