Title of article
Parametric study on non-vacuum chemical vapor deposition of CuInS2 from a single-source precursor
Author/Authors
Kelly، نويسنده , , Christopher V. and Jin، نويسنده , , Michael H.-C. and Banger، نويسنده , , Kulbinder K. and McNatt، نويسنده , , Jeremiah S. and Dickman، نويسنده , , John E. and Hepp، نويسنده , , Aloysius F.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
6
From page
403
To page
408
Abstract
Copper indium disulfide (CuInS2) films were deposited by aerosol-assisted chemical vapor deposition (AACVD) from a single-source precursor (SSP), (PPh3)2Cu(SEt)2In(SEt)2. Various deposition parameters were explored to understand how they affect the crystallography, stoichiometry, and morphology of the deposited films and the quality of fabricated solar cells. Parameters explored included the deposition temperature, location of substrate within CVD reactor, precursor concentration in toluene carrier solvent, and post-deposition annealing in a S-rich atmosphere. CuInS2 films have been fabricated into complete solar cells with the top-down composition of Al/ZnO:F/CdS/CuInS2/Mo/glass and the efficiency of 1.0% under simulated AM0 illumination.
Keywords
chemical vapor deposition , Single-source precursor , CuInS2
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2005
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2142342
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