The interaction of boron and phosphorus with dislocations in silicon

We present measurements of the lower yield point of highly boron doped silicon. Comparison to similar investigations on phosphorus doped material reveals a principally different temperature dependence of the lower yield stress, although the doping concentration of the crystals and the strain-rate and temperature ranges of the experiments were the same. In boron doped silicon, a temperature independent domain emerges, while for phosphorus doping there remains a well-defined temperature dependence. Apparently the interaction of boron with dislocations in silicon is different from that of phosphorus. Suitable models are available to describe the different influence of both dopants on the yield point.