Atomic layer deposition rate, phase composition and performance of HfO2 films on noble metal and alkoxylated silicon substrates

HfO2 films were grown by atomic layer deposition from HfCl4 and H2O on atomic layer deposited metal (Pt, Ir, Ru) films with rate exceeding that on SiO2/Si substrates. The phase formed at any growth stages on metals was monoclinic HfO2 without essential contribution from amorphous or metastable phases. The latter phases were prominent in the films on Si substrates functionalized with alcohol groups. The growth rate of amorphous HfO2 from HfCl4 or Hf[N(CH3)2]4 and H2O on functionalized Si was comparable to that on SiO2 and higher than that commonly obtained on H-terminated Si surface. Instabilities in dielectric properties of HfO2 could be reduced by post-deposition annealing. The Si surface functionalized with propanol groups promoted slightly more intense crystallization upon annealing, compared to butanol-functionalized surface