γ-Radiation influence on the photoelectrical properties of oxide–p-InSe heterostructure

γ-Radiation (60Co) influence on the photoelectrical parameters of the intrinsic oxide–p-InSe heterostructures is investigated. Its influence is found in reducing the resistivity of the substrate as well as in potential barrier increasing between the oxide and semiconductor. It was established that after the γ-irradiation at their illumination a short-circuit current increased by more than twice and the open-circuit voltage was increased by 15%. Changes of the photoelectric parameters are explained starting from the model taking into account a formation in the base semiconductor of the radiation-induced defects of acceptor nature.