Fluorine-free and fluorine containing MOCVD precursors for electronic oxides: a comparison

MOCVD processes adopting two different precursors Sr(tmhd)2pmdeta and Sr(hfac)2tetraglyme have been compared. u FT-IR monitoring shows that Sr(hfac)2tetraglyme posses suitable thermal stability upon sublimation and good mass-transport properties. By contrast, Sr(tmhd)2pmdeta posses lower stability which precludes efficient sublimation/evaporation processes, thus requiring reactors equipped with liquid delivery systems for efficient MOCVD processes. ts on the MOCVD process have been obtained combining in situ FT-IR and ex situ XRD, XPS, SEM and EDX techniques. neous films have been deposited on Pt/TiN/SiO2/Si substrates in the 300–500 °C temperature range. XRD and XPS analyses have shown that fluorine or carbonate containing films are obtained adopting Sr(hfac)2tetraglyme or Sr(dpm)2pmdeta, respectively.