Title of article :
New developments on FRAMs: [3D] structures and all-perovskite FETs
Author/Authors :
Scott، نويسنده , , J.F.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Abstract :
A discussion is presented of new directions in ferroelectric random access memories (FRAMs) and ferroelectric capacitors for dynamic random access memories (DRAMs), emphasizing [3D] structures and new materials, as well as ferroelectric gates and new mechanisms of domain wall motion in nano-scale geometries.
Keywords :
electronic ceramics , Ferroelectrics
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
