Author/Authors :
Chang، نويسنده , , S.J. and Yu، نويسنده , , H.C. and Su، نويسنده , , Y.K. and Chen، نويسنده , , I.L. and Lee، نويسنده , , T.D. and Lu، نويسنده , , C.M. and Chiou، نويسنده , , C.H. and Lee، نويسنده , , Z.H. and Yang، نويسنده , , H.P. and Sung، نويسنده , , C.P.، نويسنده ,
Abstract :
Highly strained GaAs-based all-epitaxial oxide confined vertical cavity surface emitting lasers (VCSELs) emitting in 1.25 μm were fabricated. Compared with the designed cavity resonance, it was found that lasing wavelength blue shifted by 29 nm when the driving current was small. The observation of such oxide mode is attributed to the effective optical thickness shrinkage of the oxide layer, and large detuning between the gain peak and cavity resonance.
Keywords :
Oxide mode , VCSEL , InGaAs , Highly strain
