Dislocation engineering for Si-based light emitting diodes

In this paper, a general overview of the technologies surrounding light emission in silicon-based systems is presented with an indication as to the applications for which they may be used. Special attention is given to the use of dislocation engineering, where, through the use of additional dopants, not only can 1150-nm band edge emission be achieved but tuning of the wavelength to accommodate telecommunications applications is also possible. Details of the impact of implantation energy and dose are demonstrated together with post implant anneal studies to optimise the process for light generation. Finally, dislocation engineering is applied to silicon on insulator (SOI), the most common optical platform.