Structural characterisation of self-implanted Si after HT-HP treatment

Recovery of damages in implanted silicon is still not fully understood. In this work, self-implanted silicon Si:Si is a model material. The implantation-damaged area in Si:Si is under high quasi-hydrostatic stress. Therefore, the application of external hydrostatic pressure (HP) at annealing of Si:Si samples gives possibility to obtain valuable information on the stress-related effects during out-annealing of structural damages. alski grown single crystalline silicon (Cz-Si) samples were subjected to the implantation with Si+ ions (silicon dose D = 5 × 1016 cm−2) at 160 keV energy (E). The Si:Si samples were treated at a high temperature (HT) up to 1130 °C under hydrostatic argon pressure up to 1.1 GPa for 5 h. s in the dielectric function (ɛ) in both the as-implanted and HT-HP treated silicon samples have been determined. The considerable amelioration of both optical and structural properties of the self-implanted silicon samples for such treatment conditions like pressure, p = 1.1 Gpa; temperature, T = 800 °C; time, t = 5 h has been observed. mples treated under 1.1 GPa and for 5 h, both real part (ɛ1) and imaginary part (ɛ2) of dielectric constant decreased with the increase of temperature in all spectral range. reement between results obtained by spectroscopic ellipsometry (SE) and other optical techniques has been found.