Strain and defect engineering in Si/Si3N4/Si by high temperature–pressure treatment

Strain and defects in silicon with buried nitride layer, prepared by annealing of nitrogen implanted Czochralski grown Si (CzSi:N) under enhanced hydrostatic pressure (HP), were investigated. To produce CzSi:N, silicon was implanted with N2+ (atomic doses 1 × 1017 cm−2 and 1 × 1018 cm−2, energy 140 keV). The samples were next treated in Ar atmosphere for 1–10 h at up to 1400 K under HP ≤ 1.4 GPa and investigated by mass spectrometry, photoluminescence, X-ray, electrical and microhardness methods. tration profiles of nitrogen and of accumulated oxygen in CzSi:N treated at ≤920 K were not affected markedly by HP. The strained nitride layers were formed in effect of the treatment at ≥1070 K. The treatments at ≥1270 K resulted in formation of the well-defined layered structures. Applied at 1400 K, HP assisted in a creation of the defect-free Si/Si3N4/Si structures.