All electrical resistivity profiling technique for ion implanted semiconductor materials

In this paper we propose an all electrical resistivity profiling technique specially suitable to characterise the effects of ion implantation processes used in lifetime engineering processes. The technique is based on the operation of a simple three terminals test device, already present in most practical structures. The theory of the measurement method is presented and two-dimensional simulations showing the reliability of the method are also shown. Moreover, experimental results gained on helium implanted devices are given. In particular, measurements performed at different temperatures have permitted to identify a trap center with an energy level located at Ec-0.23 eV as the responsible for the changes in the resistivity of helium implanted devices.