Characteristics of silicon p–n junction formed by ion implantation with in situ ultrasound treatment

The forming peculiarities of electrically active impurities (B, As, Sb) in silicon with in situ ultrasound (US) excitation have been investigated. The US excitation influences significantly on the redistribution of defects generated by ion implantation. It is shown that there is the possibility of controlling the p–n junction parameters by varying the frequency and intensity of US excitation. The changing of p–n junction parameters is caused by the influence of the US treatment due to interaction of Si structural defects with implanted impurity. The changing of both the quantity of defects and impurities redistribution are realized with the activation annealing that follows implantation. The influence of US treatment on Si shallow p–n junction parameters has been studied in detail. It is shown that the use of US defect engineering is perspective at forming high-quality Si p–n junctions.