Fabrication of 100 nm gate length MOSFETʹs using a novel carbon nanotube-based nano-lithography

PECVD-grown carbon nanotubes on (1 0 0)silicon substrates have been studied and exploited for electron emission applications. After the growth of vertical CNTʹs [Y. Abdi, J. Koohsorkhi, J. Derakhshandeh, S. Mohajerzadeh, H. Hosseinzadegan, M.D. Robertson, C. Benet, EMRS Spring Meeting, Strasbourg, France, May 2005] the grown nanotubes are encapsulated by means of an insulating TiO2 layer, leading to beam-shape emission of electrons from the cathode towards the opposite anode electrode. The electron emission occurs using an anode–cathode voltage of 100 V with ability of direct writing on a photo-resist-coated substrates. Straight lines with widths between 50 and 200 nm have been successfully drawn. This technique has been applied on P-type (1 0 0)silicon substrates for the formation of the gate of N-MOSFET devices. The successful realization of MOSFET devices indicates its usefulness for applications in nano-electronic devices. This device has inversion COX exceeding 0.7 μF/cm2, drive current equal to 310 μA/μm.