Photoluminescent Si nanoparticles embedded in silicon oxide matrix

Annealing of bulk SiO at temperatures above 850 °C leads to the formation of Si nanocrystals embedded in an amorphous silicon oxide matrix. Structural investigations by X-ray diffraction and transmission electron microscopy reveal a broad size distribution with a large abundance of isolated Si nanocrystals below 5 nm. Strong photoluminescence emission spectra in the near-infrared region were recorded at room temperature and at 100 K with three main emission bands observed. Higher annealing temperatures resulted in increased emission intensities without significant changes in the spectral shape of the photoluminescence emission. This method could be a promising way to produce Si-based photoluminescent materials in large quantities.