Author/Authors :
Szekeres، نويسنده , , A. and Nikolova، نويسنده , , T. and Paneva، نويسنده , , A. and Cziraki، نويسنده , , Mashkoor A. and Kovacs، نويسنده , , Gy. J. and Lisovskyy، نويسنده , , I. and Mazunov، نويسنده , , D. and Indutnyy، نويسنده , , I. and Shepeliavyi، نويسنده , , P.، نويسنده ,
Abstract :
Thin vacuum-evaporated SiOx films with embedded Si nanoparticles are studied by applying spectral ellipsometry and transmission electron microscopy. The Si nano-inclusions in the oxide matrix were formed by thermal annealing in argon at 700 and 1000 °C for 5 and 30 min, respectively. The results have shown that during annealing the films undergo densification, and Si nano-clusters with averaged size of 3 nm are formed in amorphous phase at 700 °C and in crystalline phase at 1000 °C.
Keywords :
Vacuum evaporated SiO , Transmission electron microscopy , Nano-sized Si clusters , Spectral ellipsometry
