Blocking and memory functionalities using metal/oxide multilayer systems

Metal–insulator–diode random access memory (MIDRAM) structures, composed of three successive tunnel barriers separated by metallic layers, are devices presenting simultaneously blocking and memory functionalities, and so, would be suitable for integration in low dimensional semiconductor-free memory matrix. It is observed on a same device magneto-resistive and rectified currents, however on the conducting window of the diode, the respective magneto-resistance is weak.