Title of article
Growth and transport properties of CuInSe2/ZnO heterostructure solar cell
Author/Authors
Dhananjay and Nagaraju، نويسنده , , J. and Krupanidhi، نويسنده , , S.B.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
5
From page
12
To page
16
Abstract
Structural and transport properties of CuInSe2/ZnO heterostructure solar cell is investigated. X-ray diffraction pattern of CuInSe2 films exhibited preferred orientation along (1 1 2) direction confirming chalcopyrite structure. Structural characterization through scanning electron microscopy revealed dense grains. The electrical properties of the solar cells were investigated using current–voltage (I–V) and capacitance–voltage (C–V) measurements. The dark I–V characteristics revealed that, in the low-field regime, conduction mechanisms follow Ohmʹs law and in the high-field region, space charge limited conduction was observed. Frequency-dependent capacitance studies were carried out to characterize the trap properties of the heterostructure.
Keywords
heterostructure , CuInSe2 thin films , Built-in voltage
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2006
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2143695
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