Microwave dielectric properties and microstructures of La(Mg1/2Ti1/2)O3 with CuO-doped

The effects of sintering aid addition on the microstructures and microwave dielectric properties of La(Mg1/2Ti1/2)O3 ceramics were investigated. CuO was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg1/2Ti1/2)O3 ceramics. With CuO addition, the densification temperature of La(Mg1/2Ti1/2)O3 can be effectively reduced from 1600 to 1300–1500 °C. It is found that doping of CuO (1–4 wt%) can significantly improve the density and dielectric properties of La(Mg1/2Ti1/2)O3 ceramics. Second phases were observed at the level of 1–4 wt% CuO additions. The quality factor Qxf was strongly dependent upon the amount of additions. Qxf values of 33,800 and 10,600 GHz could be obtained at 1300–1500 °C with 1 and 4 wt% CuO addition, respectively. During all addition ranges, the relative dielectric constants were different and ranged from 25.89 to 29.63. The temperature coefficient varies from −52.11 to −68.22 ppm/°C.