Title of article :
Study on the Raman scattering measurements of Mn ion implanted GaN
Author/Authors :
Zhang، نويسنده , , Y.H. and Guo، نويسنده , , L.L. and Shen، نويسنده , , W.Z.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Abstract :
We investigate the temperature dependent Raman spectra of Mn implanted (Ga,Mn)N samples with five Mn implantation doses. A small shoulder at 572.4 cm−1 on the high energy side of the main Raman peak E 2 H has been attributed to the Mn-related local vibrational mode (LVM). It is found that with the increase of Mn implantation dose the intensity ratio of LVM to that of the E 2 H ( I LVM / I E 2 H ) increases at first and tends to saturate at high implantation dose. In addition, at high temperature or after rapid thermal anneal treatment, the value of I LVM / I E 2 H decreases significantly, explaining the reason why it is difficult to observe Mn-related LVM reported in the literature.
Keywords :
Raman spectra , Local vibrational mode , Diluted magnetic semiconductors
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B