Title of article
Selective epitaxial growth of SiGe for strained Si transistors
Author/Authors
Ning، نويسنده , , X.J. and Gao، نويسنده , , D. and Bonfanti، نويسنده , , P. and Wu، نويسنده , , H. and Guo، نويسنده , , J. and Chen، نويسنده , , J. and Shen، نويسنده , , C.C. and Chen، نويسنده , , I.C. and Cherng، نويسنده , , G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
7
From page
165
To page
171
Abstract
A selective SiGe epitaxial growth for strained CMOS Si technology was developed for 65 nm logic technology generation that integrates with Ni silicidation. A 36% device performance improvement for PMOS devices was achieved using this technology. Key process parameters for this technology such as Si recess etch, epitaxial surface preparation, SiGe growth and Ni silicidation are discussed. Experimental results for these process parameters are also presented.
Keywords
SiGe , Strained Si
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2006
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2144747
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