Stress dependent structure of annealed nitrogen-doped Cz-Si

Structure and related properties of Czochralski silicon, Cz-Si, doped with nitrogen, Si-N, with the concentrations of nitrogen (1–2) × 1014 cm−3 and of oxygen (9–10) × 1017 cm−3, subjected to processing for 5–10 h at up to 1400 K under enhanced hydrostatic pressure of argon (HP, up to 1.4 GPa), were investigated by infrared spectroscopy, photoluminescence (PL) and electrical methods. the presence of nitrogen in Si-N annealed at 698–748 K under 105 Pa results in suppression of the generation of thermal donors, TDs, processing of Si-N under HP produces numerous TDs. denced by the HP-dependent PL spectra, the treatment of Si-N under HP at 1070–1400 K stimulates precipitation of oxygen interstitials (Oi) with generation of small oxygen-containing defects. The effect of HP on microstructure of nitrogen-containing Cz-Si is related to stress-induced activation of nitrogen to form nuclei for precipitation of Oiʹs.