Title of article
High temperature piezoresistance properties of 6H–SiC ceramics doped with trivalent elements
Author/Authors
Kishimoto، نويسنده , , Akira and Mutaguchi، نويسنده , , Daisuke and Hayashi، نويسنده , , Hidetaka and Numata، نويسنده , , Yoshimitsu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
5
From page
145
To page
149
Abstract
Piezoresistance coefficient was measured at room and elevated temperatures on 6H–SiC ceramics doped with different amounts of boron, aluminum or gallium. The piezoresistance coefficient increased with increasing the addition within their solid solution limits. The profile of carrier concentrations, lattice constant and piezoresistance coefficient against doping levels were closely related. In few samples piezoresistance coefficient slightly decreased with measurement temperature.
Keywords
silicon carbide , Doping effect , piezoresistance
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2006
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2145151
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