Title of article
Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates
Author/Authors
Perova، نويسنده , , T.S. and Lyutovich، نويسنده , , K. and Kasper، نويسنده , , E. and Waldron، نويسنده , , A. and Oehme، نويسنده , , M. and Moore، نويسنده , , R.A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
3
From page
192
To page
194
Abstract
Micro-Raman spectroscopy is employed for the determination of stress in strained-Si grown on ultra-thin SiGe virtual substrates with a high degree of relaxation (70–100%) and with Ge content varied from 0.12 to 0.42. Stress, σ and strain, ɛ in the strained-Si layers are estimated from analysis of the spectral shifts of the Si phonon bands registered from both the strained-Si layer and the SiGe layer, taking into account the coherence conditions.
Keywords
Silicon , Raman spectroscopy , Germanium , Epitaxial silicon
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2006
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2145161
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