Title of article :
Dynamic response of carbon nanotube field-effect transistors analyzed by S-parameters measurement
Author/Authors :
Bethoux، نويسنده , , J.-M. and Happy، نويسنده , , H. and Dambrine، نويسنده , , G. and Derycke، نويسنده , , V. and Goffman، نويسنده , , M. and Bourgoin، نويسنده , , J.-P.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Abstract :
Carbon nanotube field-effect transistors (CN-FET) with a metallic back gate have been fabricated. By assembling a number of CNs in parallel, driving currents in the mA range have been obtained. The dynamic response of the CN-FETs has been investigated through S-parameters measurements. A current gain (|H21|2) cut-off frequency (ft) of 8 GHz, and a maximum stable gain (MSG) value of 10 dB at 1 GHz have been obtained. The extraction of an equivalent circuit is proposed.
Keywords :
Carbon nanotube field-effect transistor (CN-FET) , GHZ , high frequency
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
