Author/Authors :
Huang، نويسنده , , Hung-Wen and Kao، نويسنده , , Chih-Chiang and Chu، نويسنده , , Jung-Tang and Wang، نويسنده , , Wei-Chih and Lu، نويسنده , , Tien-Chang and Kuo، نويسنده , , Hao-Chung and Wang، نويسنده , , Shing-Chung and Yu، نويسنده , , Chang-Chin and Kuo، نويسنده , , Shou-Yi، نويسنده ,
Abstract :
The InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface fabricated by using Ni nano-masks and laser etching methods were demonstrated and analyzed. The experiment results observed the maximum light output power of the InGaN/GaN LED with a nano-roughened top p-GaN surface etched with the laser energy of 300 mJ/cm2 was 1.55 times higher than that of a conventional LED, and the wall-plug efficiency was enhanced 68% at 20 mA. The series resistance of InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.
