Author/Authors :
Wang، نويسنده , , Cheng-Liang and Tsai، نويسنده , , Ming-Chang and Gong، نويسنده , , Jyh-Rong and Liao، نويسنده , , Wei-Tsai and Lin، نويسنده , , Ping-Yuan and Yen، نويسنده , , Kuo-Yi and Chang، نويسنده , , Chia-Chi and Lin، نويسنده , , Hsin-Yueh and Hwang، نويسنده , , Shen-Kwang، نويسنده ,
Abstract :
Investigations were conducted to explore the effect of Al0.3Ga0.7N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In0.2Ga0.8N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al0.3Ga0.7N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In0.2Ga0.8N/GaN MQW LED structures enables the improved LED performance.
