Title of article
Magnetic properties of Mn-doped ZnO powder and thin films
Author/Authors
Hou، نويسنده , , Deng-Lu and Ye، نويسنده , , Xiaojuan and Meng، نويسنده , , Huai-Juan and Zhou، نويسنده , , Hongjuan and Li، نويسنده , , Xiu-Ling and Zhen، نويسنده , , Cong-Mian and Tang، نويسنده , , Gui-De، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
5
From page
184
To page
188
Abstract
Zn0.96Mn0.04O powder and thin films were prepared by standard solid-state reaction processes and radio-frequency (RF) magnetron sputtering. Magnetic measurements indicate that the powder is paramagnetic for temperatures above 3 K, while the thin films annealed in vacuum are ferromagnetic at room temperature with a transition temperature of about 400 K. The largest saturated magnetization (Ms) was found to be about 1.05 μB/Mn, while the coercive force was found to be 100 Oe at room temperature. The very different results for the powder and thin films indicate that growth conditions and defects play an important role in producing ferromagnetism.
Keywords
Ferromagnetism , sputtering , Diluted magnetic semiconductor
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2007
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2145321
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