Effect of tin doping on the properties of indium-tin-oxide films deposited by radio frequency magnetron sputtering

Indium-tin-oxide doped tin films were prepared by magnetron sputtering under various sputtering power of tin target and various post-annealing temperatures. Experimental results show that the carrier concentration of these films increased with the doping of tin, although, the mobility of the carrier decreased. When the sputtering power of tin target is 7.5 W, there is maximum carrier mobility of 32.1 cm2 s V−1 and lowest resistivity of 6.92 × 10−4 Ω cm. After annealing, an electrical resistivity as low as 2.67 × 10−4 Ω cm was obtained. The optical transmittance of films in visible region increased over 90% after annealing. The optical energy band gap increased with the increase of the annealing temperature and the optical band gap is 3.96 eV at 450 °C.