Title of article
Boron-doped silicon nano-wires
Author/Authors
Niu، نويسنده , , Jun Jie and Wang، نويسنده , , Jian Nong and Chen، نويسنده , , Yi Xiang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
4
From page
95
To page
98
Abstract
The boron-doped silicon nano-wires (B-SiNWs) were fabricated by chemical vapor deposition (CVD) and Al2O3 template process at a low temperature (620 °C). It is found that the peaks in Raman scattering and photoluminescence spectra shift after boron-doping, indicating that the crystalline degree of B-SiNWs was slightly varied compared with un-doped SiNWs. Finally, the mechanism of B-doped SiNWs was discussed briefly.
Keywords
Nanostructure , Doping , Silicon
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2007
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2145355
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