• Title of article

    Photocatalytic activities of hetero-junction semiconductors WO3/SrNb2O6

  • Author/Authors

    Huang، نويسنده , , Yuan-Tao and Lin، نويسنده , , Xinping and Xing، نويسنده , , Jingcheng and Wang، نويسنده , , Wendeng and Shan، نويسنده , , Zhichao and Huang، نويسنده , , Fuqiang، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2007
  • Pages
    6
  • From page
    49
  • To page
    54
  • Abstract
    Hetero-junction photocatalysts WO3/SrNb2O6 were synthesized by a milling–annealing method. The powders were characterized by X-ray diffraction (XRD) and UV–vis diffuse reflection spectroscopy (DRS). Their UV-induced photocatalytic activities were evaluated by the degradation of methyl orange. The results generally show that the hetero-junction semiconductors WO3/SrNb2O6 exhibit better photocatalytic properties than bare SrNb2O6 or WO3. The enhanced performance of WO3/SrNb2O6 is mainly ascribed to the electric field driven electron–hole separations at the interface and in the two semiconductors. An ideal construction scheme for highly efficient combined photocatalysts was proposed. That is, an electron-accepting n-type semiconductor with a high electron conduction ability couples a hole-accepting semiconductor with an open structure and the fair hole conductivity.
  • Keywords
    Semiconductor combination , photocatalysis , WO3/SrNb2O6 , Electron–hole separation
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    2007
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2145435