Title of article
Synthesis and optical property of high purity AlN nanowires
Author/Authors
Lei، نويسنده , , M. and Yang، نويسنده , , H. and Guo، نويسنده , , Y.F and Song، نويسنده , , B. and Li، نويسنده , , P.G. and Tang، نويسنده , , W.H.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
5
From page
85
To page
89
Abstract
High quality AlN nanowires with hexagonal crystal structure were synthesized by the direct nitridation method at high temperature. The structural property of the AlN nanowires was investigated in detail. It is found that these straight AlN nanowires have smooth surface with length around 20–60 μm. TEM observation confirms the nanowires are single-crystalline and grow along [11–20] direction. In addition, Raman scattering and photoluminescence spectra from AlN nanowires were studied.
Keywords
nitrides , Semiconductors , Raman spectroscopy , Photoluminescence spectrum
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2007
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2145488
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