Title of article
Current-induced electroresistance in tetravalent cation-doped La0.9Hf0.1MnO3 epitaxial thin films
Author/Authors
Gao، نويسنده , , J. and Wang، نويسنده , , L.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
3
From page
97
To page
99
Abstract
Influence of electric currents with a high density on the transport behavior of La0.9Hf0.1MnO3 thin films has been investigated in the absence of magnetic field. With different dc-currents from I = 0.5 mA (current density J = 1.0 × 103 A/cm2) to 25.0 mA (J = 4.8 × 104 A/cm2) applied on the sample, a striking observation is the significant decrease of the metal-insulator transition peak. The observed reduction ratio, the electroresistance ER = [R(0) − R(I)]/R(I) is ∼20%. This observation is similar to what we observed in other CMR systems like La1−xCaxMnO3 and La1−xBaxMnO3, indicating that the current-induced ER is a common feature for the CMR materials. The introduced new state is metastable and can be well repeated. Experiments revealed that it is not caused by oxygen deficiency. Although the nature behind such an effect has not been well understood yet, the observed ER effect seems to favor a percolative phase separation picture.
Keywords
La0.9Hf0.1MnO3 , Thin film , Electroresistance
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2007
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2145512
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