New approach of Nano-Selective Area Growth (NSAG) for a precise control of GaN nanodots grown by MOVPE

Nanodots arrays of GaN have been successfully grown on GaN template substrates using nano-selective area growth (NSAG). The substrates used in NSAG were partially covered by dielectric masks in which nano-apertures have been patterned by electron-beam nanolithography and reactive ion etching. The growths were performed by low pressure metal organic vapour phase epitaxy (MOVPE) using 100% N2 as carrier gas. TMGa and NH3 were used as sources of gallium and nitrogen, respectively. The layers were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Perfect selectivity of GaN on the masked substrate has been obtained. The nanodots grown in the nano-apertures are well shaped and homogenous with smooth surface side walls.