Title of article
Doping dependence of LO-phonon depletion scheme THz quantum-cascade lasers
Author/Authors
Andrews، نويسنده , , Aaron Maxwell and Benz، نويسنده , , Alexander and Deutsch، نويسنده , , Christoph and Fasching، نويسنده , , Gernot and Unterrainer، نويسنده , , Karl and Klang، نويسنده , , Pavel and Schrenk، نويسنده , , Werner and Strasser، نويسنده , , Gottfried، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
4
From page
152
To page
155
Abstract
The effect of doping on terahertz quantum-cascade lasers (QCL) utilizing the longitudinal-optical (LO)-phonon depletion scheme of the lower laser state is investigated. Five identical 2.8 THz samples were grown with 2D equivalent doping ranging from 4.3 × 109 to 3.9 × 1010 cm−2. A linear dependence on doping is observed for both the threshold current density Jth and maximum current density Jmax. Only the sample doped to 3.9 × 1010 cm−2 shows the effects of free-carrier absorption with a nonlinear increase in Jth, while the Jmax remained linear. Since the applied field determines when the lasing action takes place, linearity is expected when the losses are independent of doping. All samples showed a similar Tmax of 140 K and T0 of 30 K.
Keywords
Laser processing , doping effects , Heterostructures , superlattices , Quantum structures , Molecular Beam Epitaxy
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2008
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2145630
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